Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hideki Inokuma0
Date of Patent
August 23, 2011
0Patent Application Number
120352600
Date Filed
February 21, 2008
0Patent Primary Examiner
Patent abstract
In a semiconductor device with a shared contact, a gate electrode is formed via a gate insulating film on a semiconductor substrate and a sidewall insulating film is formed on both side faces of the gate electrode. At least one of the surface parts of the semiconductor substrate adjacent to both sides of the gate electrode is removed beyond the lower part of the sidewall insulating film and to the underside of the gate electrode. Then, the gate insulating film exposed in the remove part is removed. An impurity-doped semiconductor layer is formed in the part where the semiconductor substrate and the gate insulating film have been removed.
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