Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
William K. Henson0
Chandrasekharan Kothandaraman0
Deok-Kee Kim0
Dureseti Chidambarrao0
Date of Patent
August 23, 2011
0Patent Application Number
116226160
Date Filed
January 12, 2007
0Patent Primary Examiner
Patent abstract
An eFuse, includes: a substrate and an insulating layer disposed on the substrate; a first layer including a single crystal or polycrystalline silicon disposed on the insulating layer; a second layer including a single crystal or polycrystalline silicon germanium disposed on the first layer, and a third layer including a silicide disposed on the second layer. The Ge has a final concentration in a range of approximately five percent to approximately twenty-five percent.
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