Patent attributes
A semiconductor device is disclosed. The semiconductor device includes a plurality of memory cells that are provided in a matrix and that have a charge storage layer made of an insulating film that is provided on a semiconductor substrate and a plurality of word lines that are provided on the charge storage layer. A plurality of memory cells that are arranged in a single line among the plurality of memory cells arranged in the matrix are coupled to the same word line. The semiconductor device further includes an application section that when reading data from a selected memory cell selected from the plurality of memory cells, applies a voltage to a selected word line to be coupled to the selected memory cell among the plurality of word lines. The application section applies a voltage that has a polarity that is opposite to the voltage applied to the selected word line to non-selected word lines arranged on both adjacent sides of the selected word line.
