Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Toshifumi Irisawa0
Naoharu Sugiyama0
Shinichi Takagi0
Date of Patent
August 30, 2011
0Patent Application Number
119507160
Date Filed
December 5, 2007
0Patent Primary Examiner
Patent abstract
A semiconductor device includes an insulator layer, and an n-channel MIS transistor having an n channel and a pMIS transistor having a p channel which are formed on the insulator layer, wherein the n channel of the n-channel MIS transistor is formed of an Si layer having a uniaxial tensile strain in a channel length direction, the p channel of the p-channel MIS transistor is formed of an SiGe or Ge layer having a uniaxial compressive strain in the channel length direction, and the channel length direction of each of the n-channel MIS transistor and the p-channel MIS transistor is a <110> direction.
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