US Patent 8009217 Solid-state imaging device
Patent 8009217 was granted and assigned to Panasonic on August, 2011 by the United States Patent and Trademark Office.
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In a solid-state imaging device, provided is a solid-state imaging device in which a first gate insulation film 22 for the readout transistor 12 in a pixel is formed so as to be thicker than a second gate insulation film 23 for an amplification transistor 14 in the pixel, and the second gate insulation film 23 for the amplification transistor 14 in the pixel is formed so as to be thicker than a third gate insulation film 24 for an n-type micro transistor 17 and a p-type micro transistor 18 in a peripheral region outside the pixel, whereby it is possible to suppress a 1/f noise of the amplification transistor 14 and also possible to increase a saturated charge amount.
US Patent 08009217 Solid-state imaging device US Patent 8009217 Solid-state imaging device
US Patent 08009217 Solid-state imaging device
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