Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chih-Lung Lin0
Cheng-Chen Calvin Hsueh0
Cheng-Yuan Tsai0
Date of Patent
September 6, 2011
0Patent Application Number
114625710
Date Filed
August 4, 2006
0Patent Primary Examiner
Patent abstract
A method of forming an isolation structure includes the steps of: (a) forming an opening within a substrate; (b) forming a substantially conformal layer comprising tetraethoxysilane (TEOS) layer along the opening; and (c) forming a dielectric layer over the TEOS layer, the dielectric layer substantially filling the opening.
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