US Patent 8030667 Nitride semiconductor light emitting diode
Patent 8030667 was granted and assigned to Samsung on October, 2011 by the United States Patent and Trademark Office.
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Patent abstract
A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.
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US Patent 08030667 Nitride semiconductor light emitting diode US Patent 8030667 Nitride semiconductor light emitting diode
Infobox
Patent Number
0803066700
Patent Number
803066700
Edits on 31 Mar, 2023
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
080306670
Date of Patent
October 4, 2011
0Patent Application Number
122583280
Date Filed
October 24, 2008
0Patent Primary Examiner
Edits on 28 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
080306670
Date of Patent
October 4, 2011
0Patent Application Number
122583280
Date Filed
October 24, 2008
0Patent Primary Examiner
Edits on 13 Dec, 2021
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Infobox (+8 properties)
US Patent 08030667 Nitride semiconductor light emitting diode
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
08030667
Date of patent
October 4, 2011
Patent application number
12258328
Date Filed
October 24, 2008
Patent primary examiner
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