Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 1, 2011
Patent Application Number
12483737
Date Filed
June 12, 2009
Patent Citations Received
Patent Primary Examiner
Patent abstract
Shallow trench isolation silicon-on-insulator (SOI) devices are formed with improved charge protection. Embodiments include an SOI film diode and a P+ substrate junction as a charging protection device. Embodiments also include a conductive path from the SOI transistor drain, through a conductive contact, a metal line, a second conductive contact, an SOI diode, isolated from the transistor, a third conductive contact, a second conductive line, and a fourth conductive contact to a P+-doped substrate contact in the bulk silicon layer of the SOI substrate.
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