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US Patent 8048760 Semiconductor structure and method of manufacture

Patent 8048760 was granted and assigned to Hvvi Semiconductors Inc on November, 2011 by the United States Patent and Trademark Office.

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Patent
Patent

Patent attributes

Current Assignee
‌
Hvvi Semiconductors Inc
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
8048760
Patent Inventor Names
Michael Albert Tischler0
Bishnu Prasanna Gogoi0
Date of Patent
November 1, 2011
Patent Application Number
12833180
Date Filed
July 9, 2010
Patent Primary Examiner
‌
Victor A. Mandala, Jr.
Patent abstract

In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a structure includes a dielectric material and a void below a surface of a substrate. The structure further includes a doped dielectric material over the dielectric material, over the first void, wherein at least a portion of the dielectric material is between at least a portion of the substrate and at least a portion of the doped dielectric material. Other embodiments are described and claimed.

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