US Patent 8101435 Fabrication method for semiconductor device
Patent 8101435 was granted and assigned to LAPIS Semiconductor Co.,Ltd. on January, 2012 by the United States Patent and Trademark Office.
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Patent abstract
A semiconductor device fabrication method can improve yield of semiconductor devices and decrease (or prevent) waste of non-defective semiconductor chips. This fabrication method has a step of performing characteristic inspection after packaging a semiconductor chip every time a semiconductor chip layer is formed. The fabrication method makes another semiconductor chip layer on this semiconductor chip layer only when the inspection indicates that the semiconductor chip is a non-defective product.
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Patent Inventor Names
Yoshinori Shizuno0
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US Patent 08101435 Fabrication method for semiconductor device US Patent 8101435 Fabrication method for semiconductor device
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Patent Number
081014350
Patent Number
81014350
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Current Assignee
Patent Jurisdiction
Patent Number
081014350
Date of Patent
January 24, 2012
0Patent Application Number
129299140
Date Filed
February 24, 2011
0Patent Primary Examiner
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US Patent 08101435 Fabrication method for semiconductor device
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
08101435
Date of patent
January 24, 2012
Patent application number
12929914
Date Filed
February 24, 2011
Patent primary examiner
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