US Patent 8116130 Integrated circuits with nonvolatile memory elements
Patent 8116130 was granted and assigned to Altera on February, 2012 by the United States Patent and Trademark Office.
All edits
Nonvolatile memory element circuitry is provided that is based on metal-oxide-semiconductor transistor structures. A nonvolatile memory element may be based on a metal-oxide-semiconductor transistor structure that has a gate, a drain, a source, and a body. During programming operations, control circuitry floats the body while applying a positive voltage to the drain and a negative voltage to the source. This causes the drain and source, which serve as the collector and emitter in a parasitic bipolar transistor, to break down. The drain-to-source (collector-to-emitter) breakdown causes sufficient current to flow through the source to alter the source electrode and thereby increase the resistance of the source significantly. During sensing operations, control circuitry may apply a voltage across the drain and source while grounding the body to determine whether the memory element has been programmed.
US Patent 08116130 Integrated circuits with nonvolatile memory elements US Patent 8116130 Integrated circuits with nonvolatile memory elements
US Patent 08116130 Integrated circuits with nonvolatile memory elements
Find more entities like US Patent 8116130 Integrated circuits with nonvolatile memory elements
