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US Patent 8128831 Plasma etching method and computer-readable storage medium

Patent 8128831 was granted and assigned to Tokyo Electron on March, 2012 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
Current Assignee
Tokyo Electron
Tokyo Electron
Date Filed
December 28, 2006
Date of Patent
March 6, 2012
Patent Application Number
11617440
Patent Citations Received
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US Patent 12125673 Pulsed voltage source for plasma processing applications
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US Patent 12106938 Distortion current mitigation in a radio frequency plasma processing chamber
0
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US Patent 12111341 In-situ electric field detection method and apparatus
0
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US Patent 11694876 Apparatus and method for delivering a plurality of waveform signals during plasma processing
0
‌
US Patent 11699572 Feedback loop for controlling a pulsed voltage waveform
0
‌
US Patent 11776788 Pulsed voltage boost for substrate processing
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US Patent 11776789 Plasma processing assembly using pulsed-voltage and radio-frequency power
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US Patent 11791138 Automatic electrostatic chuck bias compensation during plasma processing
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US Patent 11887813 Pulsed voltage source for plasma processing
0
‌
US Patent 11948780 Automatic electrostatic chuck bias compensation during plasma processing
0
•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
8128831
Patent Primary Examiner
‌
Anita Alanko

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