US Patent 8139133 Photoelectric conversion device

In a photoelectric conversion device, a first metal wiring layer and a second metal wiring layer are arranged on a semiconductor substrate that includes a pixel region where a plurality of pixels are arrayed in a matrix, each pixel including at least a photoelectric conversion portion and an amplification transistor. The second metal wiring layer includes power supply lines each configured to supply a power supply voltage to the amplification transistors of at least two pixel columns, and the amplification transistor of a pixel column having no power supply line receives the power supply voltage from the power supply line via the first metal wiring layer.