US Patent 8154073 Semiconductor device
Patent 8154073 was granted and assigned to Denso on April, 2012 by the United States Patent and Trademark Office.
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A semiconductor device includes: a semiconductor substrate; a vertical type trench gate MOS transistor; a Schottky barrier diode; multiple trenches having a stripe pattern to divide an inner region into first and second separation regions; and a poly silicon film in each trench. The first separation region includes a first conductive type region for providing a source and a second conductive type layer for providing a channel region. The first conductive type region is adjacent to a first trench. The poly silicon film in the first trench is coupled with a gate wiring. A second trench is not adjacent to the first conductive type region. The poly silicon film in the second trench is coupled with a source or gate wiring. The substrate in the second separation region is coupled with the source wiring for providing a Schottky barrier.
US Patent 08154073 Semiconductor device US Patent 8154073 Semiconductor device
US Patent 08154073 Semiconductor device
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