US Patent 8198106 Dense array of field emitters using vertical ballasting structures
Patent 8198106 was granted and assigned to Massachusetts Institute of Technology on June, 2012 by the United States Patent and Trademark Office.
All edits
A field emitter array structure is provided. The field emitter array structure includes a plurality of vertical un-gated transistor structures formed on a semiconductor substrate. The semiconductor substrate includes a plurality of vertical pillar structures to define said un-gated transistor structures. A plurality of emitter structures are formed on said vertical un-gated transistor structures. Each of said emitter structures is positioned in a ballasting fashion on one of said vertical un-gated transistor structures so as to allow said vertical ungated transistor structure to effectively provide high dynamic resistance with large saturation currents.
US Patent 08198106 Dense array of field emitters using vertical ballasting structures US Patent 8198106 Dense array of field emitters using vertical ballasting structures
US Patent 08198106 Dense array of field emitters using vertical ballasting structures
Find more entities like US Patent 8198106 Dense array of field emitters using vertical ballasting structures
