Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Steven P. DenBaars0
Mathew C. Schmidt0
Robert M. Farrell0
Shuji Nakamura0
Daniel A. Cohen0
Daniel F. Feezell0
James S. Speck0
Kwang-Choong Kim0
Date of Patent
July 3, 2012
0Patent Application Number
120301170
Date Filed
February 12, 2008
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
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