Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hideomi Suzawa0
Shinya Sasagawa0
Taiga Muraoka0
Date of Patent
August 7, 2012
0Patent Application Number
125820740
Date Filed
October 20, 2009
0Patent Citations Received
Patent Primary Examiner
Patent abstract
In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. The etching step is performed by dry etching in which an etching gas is used.
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