US Patent 8247855 Enhanced local interconnects employing ferroelectric electrodes

A ferroelectric device employs ferroelectric electrodes as local interconnect(s). One or more circuit features are formed within or on a semiconductor body. A first dielectric layer is formed over the semiconductor body. Lower contacts are formed within the first dielectric layer. A bottom electrode is formed over the first dielectric layer and on the lower contacts. A ferroelectric layer is formed on the bottom electrode. A top electrode is formed on the ferroelectric layer. A second dielectric layer is formed over the first dielectric layer. Upper contacts are formed within the second dielectric layer and in contact with the top electrode. Conductive features are formed on the upper contacts.