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US Patent 8258572 SRAM structure with FinFETs having multiple fins
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Patent
Date Filed
September 24, 2010
Date of Patent
September 4, 2012
Patent Application Number
12890132
Patent Citations Received
US Patent 11792969 Preventing gate-to-contact bridging by reducing contact dimensions in FinFET SRAM
US Patent 11764112 Methods for fabricating FinFETs having different fin numbers and corresponding FinFETs thereof
US Patent 11784255 Semiconductor devices with bent portions
Patent Inventor Names
Jhon-Jhy Liaw
0
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
8258572
Patent Primary Examiner
Jarrett Stark
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