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US Patent 8264065 ESD/antenna diodes for through-silicon vias

Patent 8264065 was granted and assigned to Synopsys on September, 2012 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Synopsys

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

8264065

Patent Inventor Names

Jamil Kawa0

Qing Su0

Zongwu Tang0

James D. Sproch0

Min Ni0

Date of Patent

September 11, 2012

Patent Application Number

12605102

Date Filed

October 23, 2009

Patent Citations Received

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US Patent 12136562 3D semiconductor device and structure with single-crystal layers

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US Patent 12068187 3D semiconductor device and structure with bonding and DRAM memory cells

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US Patent 12080743 Multilevel semiconductor device and structure with image sensors and wafer bonding

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US Patent 12094829 3D semiconductor device and structure

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US Patent 12094892 3D micro display device and structure

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US Patent 12094965 3D semiconductor device and structure with metal layers and memory cells

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US Patent 12120880 3D semiconductor device and structure with logic and memory

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Patent Primary Examiner

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Ida M. Soward

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