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US Patent 8313999 Multi-gate semiconductor device with self-aligned epitaxial source and drain

Patent 8313999 was granted and assigned to Intel on November, 2012 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Intel

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

8313999

Patent Inventor Names

Tahir Ghani0

Anand S. Murthy0

Annalisa Cappellani0

Harry Gomez0

Kuan-Yueh Shen0

Date of Patent

November 20, 2012

Patent Application Number

12646518

Date Filed

December 23, 2009

Patent Citations Received

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US Patent 11996447 Field effect transistors with gate electrode self-aligned to semiconductor fin

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US Patent 11757002 Reduced local threshold voltage variation MOSFET using multiple layers of epi for improved device operation

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US Patent 11764264 LDD-free semiconductor structure and manufacturing method of the same

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US Patent 11894039 FFT-DRAM

Patent Primary Examiner

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Matthew Reames

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