US Patent 8318608 Method of fabricating a nonvolatile charge trap memory device

Patent 8318608 was granted and assigned to Cypress Semiconductor Corporation on November, 2012 by the United States Patent and Trademark Office.

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Patent

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Current Assignee

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

83186080

Patent Inventor Names

Krishnaswamy Ramkumar0

Jeong Byun0

Sagy Levy0

Date of Patent

November 27, 2012

Patent Application Number

121974660

Date Filed

August 25, 2008

Patent Citations Received

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US Patent 11784243 Oxide-nitride-oxide stack having multiple oxynitride layers

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US Patent 12009401 Memory transistor with multiple charge storing layers and a high work function gate electrode

Patent Primary Examiner

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Tammy Thanh Nguyen

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