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US Patent 8344424 Enhancement mode gallium nitride power devices

Patent 8344424 was granted and assigned to Transphorm Inc. on January, 2013 by the United States Patent and Trademark Office.

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Patent attributes

Current Assignee

Transphorm Inc.

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Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Chang Soo Suh0

Umesh Mishra0

Date of Patent

January 1, 2013

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Patent Application Number

134067230

Date Filed

February 28, 2012

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Patent Citations Received

US Patent 12081207 Passive discharge circuit for bidirectional semiconductor switches

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US Patent 11862630 Semiconductor device having a bidirectional switch and discharge circuit

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US Patent 11973138 N-polar devices including a depleting layer with improved conductivity

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US Patent 12074588 Cascode device with one or more normally-on gates

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US Patent 12074150 Module configurations for integrated III-nitride devices

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US Patent 11749656 Module configurations for integrated III-Nitride devices

Patent Primary Examiner

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Patent abstract

Enhancement mode III-nitride devices are described. The 2DEG is depleted in the gate region so that the device is unable to conduct current when no bias is applied at the gate. Both gallium face and nitride face devices formed as enhancement mode devices.

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