Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Mark P. D'Evelyn0
Rajat Sharma0
Date of Patent
January 15, 2013
0Patent Application Number
125693370
Date Filed
September 29, 2009
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A high efficiency microcavity light emitting diode comprises a stack of AlxInyGa1-x-yN layers, where 0≦x, y, x+y≦1, with each layer having a high crystalline quality. The stack has a uniform thickness less than 6λ/n, with an active layer centered approximately (2i+1)λ/(4n) from a reflective electrical contact, where λ is the peak emission wavelength, n is the index of refraction at the peak emission wavelength, i is an integer, and each layer within the stack has a dislocation density below about 105 cm−2.
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