Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Wei Lu0
Date of Patent
February 12, 2013
0Patent Application Number
128338980
Date Filed
July 9, 2010
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A resistive memory device includes a first electrode; a second electrode having a polycrystalline semiconductor layer that includes silicon; a non-crystalline silicon structure provided between the first electrode and the second electrode. The first electrode, second electrode and non-crystalline silicon structure define a two-terminal resistive memory cell.
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