Patent attributes
A semiconductor light-emitting device having a substrate on which a semiconductor multilayer film is disposed, the semiconductor multilayer film having a layered structure in which a first conductive layer, a light-emitting layer and a second conductive layer are layered above the substrate from bottom to top in the stated order, and being divided into portions by grooves extending perpendicular to the substrate, each portion having a diode structure and serving as a light-emitting element 12, each light-emitting element 12 having a hole 22 in a central portion thereof in plan view, the hole 22 penetrating through the second conductive layer 18 and the light-emitting layer 16 and reaching the first conductive layer 14, and comprising: a first electrode 24 inserted in the hole 22 and having a columnar shape, one end thereof being connected to the first conductive layer 14 at the bottom of the hole 22, and the other end protruding from an opening of the hole 22; and a second electrode 26 formed on the second conductive layer 18 and having an annular shape surrounding the opening of the hole 22.
