Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Sharon Shi0
The-Tu Chau0
Deva Pattanayak0
Kuo-In Chen0
Kyle Terrill0
Martin Hernandez0
Qufei Chen0
Date of Patent
April 2, 2013
0Patent Application Number
113869270
Date Filed
March 21, 2006
0Patent Citations Received
Patent Primary Examiner
Patent abstract
Ultra-low drain-source resistance power MOSFET. In accordance with an embodiment of the preset invention, a semiconductor device comprises a plurality of trench power MOSFETs. The plurality of trench power MOSFETs is formed in a second epitaxial layer. The second epitaxial layer is formed adjacent and contiguous to a first epitaxial layer. The first epitaxial layer is formed adjacent and contiguous to a substrate highly doped with red Phosphorous. The novel red Phosphorous doped substrate enables a desirable low drain-source resistance.
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