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US Patent 8425875 Lithium niobate SAW wafer containing Ta impurities

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Patent
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
84258750
Patent Inventor Names
Stephane Chamaly0
Dieter Hans Jundt0
Maria Claudia Custodio Kajiyama0
Date of Patent
April 23, 2013
0
Patent Application Number
128698830
Date Filed
August 27, 2010
0
Patent Citations Received
‌
US Patent 11665823 Functional substrates for printed electronic devices
0
Patent Primary Examiner
‌
Steven Bos
0
Patent abstract

The low Ta impurity content in pyrochlore ore makes it unnecessary to use a solvent extraction process to separate Nb from Ta. Consequently, niobium pentoxide powders using this ore can be produced at lower cost than competing mining/refining approaches, but in turn contain significant amounts of Ta impurities. SAW wafers are grown from melts produced by reacting niobium pentoxide powders containing Ta impurities at levels of 200 ppm or more by weight. Given proper amounts of starting powders, crystals can be grown with good yields and reproducible properties that satisfy typical SAW wafer specifications. The consistency across various lots of powders may be further improved by adding an appropriate amount of Ta pentoxide to the starting powders.

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