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US Patent 8427881 Semiconductor memory device and programming method thereof

Patent 8427881 was granted and assigned to Samsung on April, 2013 by the United States Patent and Trademark Office.

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Patent abstract

A programming method of a semiconductor memory device includes charging a channel of an inhibit string to a precharge voltage provided to the common source line and boosting the charged channel by providing a wordline voltage to the cell strings. The inhibit string is connected to a program bitline among the bitlines.

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