US Patent 8432016 Stacked body-contacted field effect transistor
Patent 8432016 was granted and assigned to RF Micro Devices on April, 2013 by the United States Patent and Trademark Office.
All edits
The present disclosure relates to a stacked body-contacted field effect transistor (FET) that includes multiple body-contacted FETs coupled in series and a lateral isolation band encircling a periphery of the multiple FETs. The multiple FETs include a first end FET having a first body, which is not directly connected to any body of any other of the multiple FETs, and a second end FET having a second body, which is not directly connected to any body of any other of the multiple FETs. The multiple FETs may include inner FETs that incorporate merged source-drains to save space. By keeping the bodies electrically separated from one another, the full benefits of body-contacting may be realized. However, by incorporating multiple FETs within a single lateral isolation band further saves space.
US Patent 08432016 Stacked body-contacted field effect transistor US Patent 8432016 Stacked body-contacted field effect transistor
US Patent 08432016 Stacked body-contacted field effect transistor
Find more entities like US Patent 8432016 Stacked body-contacted field effect transistor
