Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
June 4, 2013
Patent Application Number
13229440
Date Filed
September 9, 2011
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for forming a photodetector device includes forming waveguide feature on a substrate, and forming a photodetector feature including a germanium (Ge) film, the Ge film deposited on the waveguide feature using a plasma enhanced chemical vapor deposition (PECVD) process, the PECVD process having a deposition temperature from about 500° C. to about 550° C., and a deposition pressure from about 666.612 Pa to about 1066.579 Pa.
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