Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
June 11, 2013
Patent Application Number
12165801
Date Filed
July 1, 2008
Patent Citations Received
0
...
Patent Primary Examiner
Patent abstract
A method and system for etching a substrate is described and, in particular, a method for etching large, high aspect ratio features, such as those in micro-electromechanical devices (MEMs), is also described. The method comprises disposing a substrate in a processing system, forming plasma having a substantial population of negatively-charged ions, and etching one or more features in the substrate using the negative ion population.
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