Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Toshinari Sasaki0
Kosei Noda0
Mizuho Sato0
Yuta Endo0
Date of Patent
July 2, 2013
0Patent Application Number
131102410
Date Filed
May 18, 2011
0Patent Citations Received
Patent Primary Examiner
Patent abstract
Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.
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