US Patent 8486791 Mufti-layer single crystal 3D stackable memory
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Patent abstract
Technology is described herein for manufacturing a three-dimensional 3D stacked memory structure having multiple layers of single crystal silicon or other semiconductor. The multiple layers of single crystal semiconductor are suitable for implementing multiple levels of high performance memory cells.
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Patent Inventor Names
Hang-Ting Lue0
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US Patent 08486791 Mufti-layer single crystal 3D stackable memory US Patent 8486791 Mufti-layer single crystal 3D stackable memory
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Patent Number
084867910
Patent Number
84867910
Edits on 27 Sep, 2022
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Patent Jurisdiction
Patent Number
084867910
Date of Patent
July 16, 2013
0Patent Application Number
132231160
Date Filed
August 31, 2011
0Patent Primary Examiner
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US Patent 08486791 Mufti-layer single crystal 3D stackable memory
Infobox
Is a
Patent jurisdiction
Patent number
08486791
Date of patent
July 16, 2013
Patent application number
13223116
Date Filed
August 31, 2011
Patent primary examiner
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