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US Patent 8487378 Non-uniform channel junction-less transistor
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Patent
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Date Filed
March 31, 2011
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Date of Patent
July 16, 2013
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Patent Application Number
13077144
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Patent Citations Received
US Patent 12136662 Methods of forming semiconductor devices
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US Patent 12094948 Forming low-resistance capping layer over metal gate electrode
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US Patent 12119386 Conductive capping for work function layer and method forming same
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US Patent 12125707 Fin field-effect transistor device and method of forming
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US Patent 12125751 Method and structure for FinFET isolation
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US Patent 12125839 Semiconductor device and layout thereof
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US Patent 11658032 Semiconductor epitaxy bordering isolation structure
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US Patent 11699758 Isolation structure having different distances to adjacent FinFET devices
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US Patent 11705519 Semiconductor device and manufacturing method thereof
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US Patent 11749682 Selective dual silicide formation using a maskless fabrication process flow
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Patent Inventor Names
Ken-Ichi Goto
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Zhiqiang Wu
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
8487378
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Patent Primary Examiner
Kimberly Rizkallah
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