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US Patent 8497528 Method for fabricating a strained structure

Patent 8497528 was granted and assigned to Taiwan Semiconductor Manufacturing Company on July, 2013 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Taiwan Semiconductor Manufacturing Company

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

84975280

Date of Patent

July 30, 2013

Patent Application Number

127750060

Date Filed

May 6, 2010

Patent Citations Received

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US Patent 12090201 Methods for treating atopic dermatitis by administering an IL-4R antagonist antibody

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US Patent 12009427 Semiconductor device and manufacturing method thereof

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US Patent 11699758 Isolation structure having different distances to adjacent FinFET devices

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US Patent 11749567 Silicon phosphide semiconductor device

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US Patent 11749682 Selective dual silicide formation using a maskless fabrication process flow

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US Patent 11749724 Semiconductor device and method of forming the same

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Patent Primary Examiner

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Thanh Y. Tran

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