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US Patent 8604618 Structure and method for reducing vertical crack propagation
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Patent Citations Received
US Patent 12073082 High capacity memory circuit with low effective latency
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US Patent 12002523 Memory circuit, system and method for rapid retrieval of data sets
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US Patent 11915768 Memory circuit, system and method for rapid retrieval of data sets
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Edits on 13 Dec, 2023
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US Patent 11842777 Methods for reducing disturb errors by refreshing data alongside programming or erase operations
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US Patent 11844217 Methods for forming multi-layer vertical nor-type memory string arrays
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edited on 13 Dec, 2023
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US Patent 11844204 Process for preparing a channel region of a thin-film transistor in a 3-dimensional thin-film transistor array
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Edits on 7 Dec, 2023
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Golden AI
edited on 7 Dec, 2023
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US Patent 11839086 3-dimensional memory string array of thin-film ferroelectric transistors
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edited on 13 Sep, 2023
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US Patent 11758727 Three-dimensional vertical nor flash thin-film transistor strings
Edits on 7 Sep, 2023
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Golden AI
edited on 7 Sep, 2023
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US Patent 11749344 Three-dimensional vertical nor flash thin-film transistor strings
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US Patent 08604618 Structure and method for reducing vertical crack propagation
US Patent 8604618 Structure and method for reducing vertical crack propagation
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Patent Number
08604618
Patent Number
8604618
Edits on 21 Dec, 2021
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Golden AI
created this topic on 21 Dec, 2021
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US Patent 08604618 Structure and method for reducing vertical crack propagation
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Is a
Patent
Patent jurisdiction
United States Patent and Trademark Office
Patent number
08604618
Date of patent
December 10, 2013
Patent application number
13239533
Date Filed
September 22, 2011
Patent primary examiner
A O Williams
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