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US Patent 8609518 Re-growing source/drain regions from un-relaxed silicon layer

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Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

Date of Patent

December 17, 2013

Patent Application Number

13189119

Date Filed

July 22, 2011

Patent Citations Received

US Patent 12132111 Formation method of semiconductor device structure with gate stacks

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US Patent 11855151 Multi-gate device and method of fabrication thereof

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US Patent 11699758 Isolation structure having different distances to adjacent FinFET devices

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US Patent 11749720 Integrated circuit structure and method with solid phase diffusion

US Patent 11749682 Selective dual silicide formation using a maskless fabrication process flow

Patent Primary Examiner

Michelle Mandala

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