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US Patent 8614486 Low resistance source and drain extensions for ETSOI
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Edits on 9 Feb, 2024
"update inverses"
Golden AI
edited on 9 Feb, 2024
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Infobox
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Infobox
Patent Citations Received
US Patent 11894039 FFT-DRAM
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Edits on 14 Sep, 2023
"update inverses"
Golden AI
edited on 14 Sep, 2023
Edits made to:
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+1
properties)
Infobox
Patent Citations Received
US Patent 11757002 Reduced local threshold voltage variation MOSFET using multiple layers of epi for improved device operation
Edits on 15 Jul, 2023
"Remove leading 0 from patent number"
Golden AI
edited on 15 Jul, 2023
Edits made to:
Infobox
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US Patent 08614486 Low resistance source and drain extensions for ETSOI
US Patent 8614486 Low resistance source and drain extensions for ETSOI
Infobox
Patent Number
08614486
0
0
Patent Number
8614486
0
0
Edits on 22 Apr, 2023
"Entity importer update"
Golden AI
edited on 22 Apr, 2023
Infobox
Is a
Patent
0
Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
08614486
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Date of Patent
December 24, 2013
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Patent Application Number
13605260
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Date Filed
September 6, 2012
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Patent Primary Examiner
Ngan Ngo
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Edits on 25 Sep, 2022
"Entity importer update"
Golden AI
edited on 25 Sep, 2022
Infobox
Is a
Patent
0
Patent Jurisdiction
United States Patent and Trademark Office
0
Patent Number
08614486
0
Date of Patent
December 24, 2013
0
Patent Application Number
13605260
0
Date Filed
September 6, 2012
0
Patent Primary Examiner
Ngan Ngo
0
Edits on 21 Dec, 2021
"Created via: Entity Importer"
Golden AI
created this topic on 21 Dec, 2021
Edits made to:
Infobox
(
+7
properties)
US Patent 08614486 Low resistance source and drain extensions for ETSOI
Infobox
Is a
Patent
Patent jurisdiction
United States Patent and Trademark Office
Patent number
08614486
Date of patent
December 24, 2013
Patent application number
13605260
Date Filed
September 6, 2012
Patent primary examiner
Ngan Ngo
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