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US Patent 8617996 Fin removal method
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Patent
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Date Filed
January 10, 2013
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Date of Patent
December 31, 2013
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Patent Application Number
13738435
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Patent Citations Received
US Patent 12132050 Semiconductor structure cutting process and structures formed thereby
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US Patent 11842899 Methods of cutting a fine pattern, methods of forming active patterns using the same, and methods of manufacturing a semiconductor device using the same
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US Patent 11894370 Semiconductor structure cutting process and structures formed thereby
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US Patent 12074165 Gate cut with integrated etch stop layer
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US Patent 11776957 Gate cut with integrated etch stop layer
Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
8617996
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Patent Primary Examiner
Cheung Lee
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