US Patent 8623146 Substrate processing method and substrate processing apparatus
Patent 8623146 was granted and assigned to Dainippon Screen Mfg Co on January, 2014 by the United States Patent and Trademark Office.
All edits
A cooling gas discharge nozzle 7 is arranged above an initial position P(Rin) distant from a rotation center P(0) of a substrate W toward the outer edge of the substrate W and supplies a cooling gas to the initial position P(0) of the rotating substrate W to solidify DIW adhering to an initial region including the initial position P(Rin) and the rotation center P(0). Following formation of an initial solidified region FR0, a range to be solidified is spread toward the outer edge of the substrate W and all the DIW (liquid to be solidified) adhering to a substrate surface Wf is solidified to entirely freeze a liquid film LF.
US Patent 08623146 Substrate processing method and substrate processing apparatus US Patent 8623146 Substrate processing method and substrate processing apparatus
US Patent 08623146 Substrate processing method and substrate processing apparatus
Find more entities like US Patent 8623146 Substrate processing method and substrate processing apparatus
