Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
January 7, 2014
Patent Application Number
12511291
Date Filed
July 29, 2009
Patent Citations Received
Patent Primary Examiner
Patent abstract
An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.
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