Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
January 14, 2014
Patent Application Number
12184401
Date Filed
August 1, 2008
Patent Citations Received
...
Patent Primary Examiner
Patent abstract
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
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