Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jonathan Tsung-Yung Chang0
Chiting Cheng0
Chung-Cheng Chou0
Date of Patent
January 14, 2014
Patent Application Number
13149611
Date Filed
May 31, 2011
Patent Citations Received
0
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Patent Primary Examiner
Patent abstract
A SRAM READ and WRITE assist apparatus comprises a bit line voltage tracking block, a READ assist timer, a READ assist unit, a WRITE assist unit a WRITE control unit. The bit line voltage tracking block detects a voltage on a tracking bit line coupled to a plurality of tracking memory cells. In response to the voltage drop on the tracking bit line, the READ assist timer generates a READ assist pulse. When the READ assist pulse has a logic high state, an activated word line is pulled down to a lower voltage. Such a lower voltage helps to improve the robustness of SRAM memory circuits so as to avoid READ and WRITE failures.
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