Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Zhiqiang Wu0
Gwan Sin Chang0
Kuo-Cheng Ching0
Shi Ning Ju0
Chun Chung Su0
Date of Patent
January 21, 2014
0Patent Application Number
136316880
Date Filed
September 28, 2012
0Patent Citations Received
Patent Primary Examiner
Patent abstract
The present disclosure provides a semiconductor device. The device includes a substrate, a fin structure formed by a first semiconductor material, a gate region on a portion of the fin, a source region and a drain region separated by the gate region on the substrate and a source/drain stack on the source and drain region. A low portion of the source/drain stack is formed by a second semiconductor material and it contacts a low portion of the fin in the gate region. An upper portion of the source/drain stack is formed by a third semiconductor material and it contacts an upper portion of the fin in the gate region.
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