Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
January 21, 2014
Patent Application Number
13723753
Date Filed
December 21, 2012
Patent Citations Received
Patent Primary Examiner
Patent abstract
Enhancement mode III-nitride devices are described. The 2DEG is depleted in the gate region so that the device is unable to conduct current when no bias is applied at the gate. Both gallium face and nitride face devices formed as enhancement mode devices.
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