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US Patent 8637359 Fin-last replacement metal gate FinFET process
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Patent
Date Filed
June 10, 2011
Date of Patent
January 28, 2014
Patent Application Number
13157812
Patent Citations Received
US Patent 12074165 Gate cut with integrated etch stop layer
0
US Patent 11776957 Gate cut with integrated etch stop layer
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
8637359
Patent Primary Examiner
Phuc Dang
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