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US Patent 8637384 FinFET parasitic capacitance reduction using air gap
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Patent
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Date Filed
September 14, 2012
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Date of Patent
January 28, 2014
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Patent Application Number
13617426
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Patent Citations Received
US Patent 12125897 Air spacers in transistors and methods forming same
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US Patent 11658062 Air gap spacer formation for nano-scale semiconductor devices
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US Patent 12027374 Processes to deposit amorphous-silicon etch protection liner
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Patent Inventor Names
Josephine B. Chang
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Pranita Kulkarni
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Sivananda K. Kanakasabapathy
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Takashi Ando
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Tenko Yamashita
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Theodorus E. Standaert
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
8637384
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Patent Primary Examiner
Long K. Tran
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