US Patent 8641932 Sintered complex oxide and sputtering target comprising same
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Patent abstract
A composite oxide sintered body includes In2Ga2ZnO7 having a homologous crystal structure, and has a relative density of 90% or more, and an average crystal grain size of 10 μm or less.
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Patent Citations Received
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Patent Inventor Names
Hirokazu Kawashima0
Koki Yano0
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Official Website
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US Patent 08641932 Sintered complex oxide and sputtering target comprising same US Patent 8641932 Sintered complex oxide and sputtering target comprising same
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Patent Number
086419320
Patent Number
86419320
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Patent Jurisdiction
Patent Number
086419320
Date of Patent
February 4, 2014
0Patent Application Number
131395930
Date Filed
December 3, 2009
0Official Website
Patent Primary Examiner
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US Patent 08641932 Sintered complex oxide and sputtering target comprising same
Infobox
Is a
Patent jurisdiction
Patent number
08641932
Date of patent
February 4, 2014
Patent application number
13139593
Date Filed
December 3, 2009
Patent primary examiner
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