Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takuya Hirohashi0
Junichiro Sakata0
Kengo Akimoto0
Masahiro Takahashi0
Akiharu Miyanaga0
Hideyuki Kishida0
Date of Patent
February 4, 2014
0Patent Application Number
136775040
Date Filed
November 15, 2012
0Patent Citations Received
0
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Patent Primary Examiner
Patent abstract
It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).
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